| abstract |
A process performs solid phase synthesis of halogenated derivatives of fluorescein, and includes reacting fluorescein with a halide MX, wherein M is an alkali metal and X is a halogen, and Oxone® ( 2 KHSO 5 .KHSO 4 .K 2 SO 4 ), at a temperature higher than or equal to 150° C. A structure uses a halogenated derivative of fluorescein selected from the group consisting of 2′,4′,5′-trichlorofluorescein, 2′,4′,5′,7′-tetrachlorofluorescein, 4′,5′-diiodofluorescein diacetate and 2′,4′,5′-triiodofluorescein as electro-bistable material in a non-volatile memory device. |