| abstract |
An interconnect structure with a thicker barrier material coverage at the sidewalls of a feature as compared to the thickness of said barrier material at the feature bottom as well as a method of fabricating such an interconnect structure are provided. The interconnect structure of the present invention has improved technology extendibility for the semiconductor industry as compared with prior art interconnect structure in which the barrier material is formed by a conventional PVD process, a conventional ionized plasma deposition, CVD or ALD. In accordance with the present invention, an interconnect structure having a barrier material thickness at the feature sidewalls (w t ) greater than the barrier material thickness at the feature bottom (h t ) is provided. That is, the w t /h t ratio is equal to, or greater than, 100% in the inventive interconnect structure. |