| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2007-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad60b78d1616f3cba147e2333490c4a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c560ad17b395855aa6a3b1cee8838a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db47a1d6e1a4e4d7a401d984dffeafc2 |
| publicationDate |
2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007232075-A1 |
| titleOfInvention |
Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device |
| abstract |
Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013020109-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011207319-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8404584-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11637065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009085170-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8164166-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541172-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022148965-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8053369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9219206-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010112813-A1 |
| priorityDate |
2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |