| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bd38b43cd45f1cae7051195745de01d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb6396d0ddd446e269382b79de263011 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2006-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e39647e66a1d19db21a79fac3147703
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43aa167a2be1b532b25293bc59a3227 |
| publicationDate |
2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007232046-A1 |
| titleOfInvention |
Damascene interconnection having porous low K layer with improved mechanical properties |
| abstract |
A method is provided for fabricating a damascene interconnection. The method begins by forming on a substrate a porous dielectric layer and imparting a porogen material into an upper portion of the porous dielectric layer to define a less porous dielectric sublayer within the dielectric layer. A capping layer is formed on the less porous dielectric sublayer and a resist pattern is formed over the capping layer to define a first interconnect opening. The capping layer and the dielectric layer are etched through the resist pattern to form the first interconnect opening. The resist pattern is removed and an interconnection is formed by filling the first interconnect opening with conductive material. The interconnection is planarized to remove excess conductive material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374127-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009203201-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10199500-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012068344-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269627-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7795142-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11328952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010231581-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008220616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11777035-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8809183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008171431-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7723226-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727350-B2 |
| priorityDate |
2006-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |