| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2984582c41f91f3938b5bc9b902dcdb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d84ed66886a2bd80e23b3326f9c21ecc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17017d5709e173601122da8aba6dd37e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37ffb97d43fad3fea25d0d1445118da9 |
| publicationDate |
2007-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007155161-A1 |
| titleOfInvention |
Selective removal of sacrificial light absorbing material over porous dielectric |
| abstract |
A method of forming a semiconductor device. The method comprises forming a conductive layer on a substrate, forming a porous dielectric layer on the conductive layer, and forming a first etched region by removing a first portion of the porous dielectric layer. The first etched region is then filled with a sacrificial light absorbing material. A layer of photoresist is then patterned to define a second region to be etched. A second region is then etched by removing part of the sacrificial light absorbing material and a second portion of the porous dielectric layer. The layer of photoresist is then removed. The remaining portions of the sacrificial light absorbing material is then removed selectively using an anhydrous solvent comprising fluoride and a solvent having molecules with at least one —OH group and three to six carbons, wherein the sacrificial light absorbing material is selectively removed over the porous dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763161-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210018976-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11587827-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102352465-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529619-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10438844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2826062-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670545-B2 |
| priorityDate |
2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |