| abstract |
A method of forming a semiconductor device using laser spike annealing is provided. The method includes providing a semiconductor substrate having a surface, forming a gate dielectric layer on the surface of the semiconductor substrate, laser spike annealing the gate dielectric layer, and patterning the gate dielectric layer and thus forming at least a gate dielectric. Source and drain regions are then formed to form a transistor. A capacitor is formed by connecting the source and drain regions. |