| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e0ac070db0601c3b0c548727172ce195
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_09040af8271d086fcf7bfa9d30ef3018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e73c8a7f69f843e749bd2d0a06dae969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_affdcca9b908009e6baa1248fa2d39d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9dc458560963da30a1998ae35c404945 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31637 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-473
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2006-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e9ca383fca775f65690e34b9b68b999
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e06a29c219ccccbcbdcd88a41a32bbe2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36676fa42cc66baadbec522123278ad7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9412f0bf0737857f96bfd8f5db970c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69eab3552a25c55175c9f696d12121c5 |
| publicationDate |
2006-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006234517-A1 |
| titleOfInvention |
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
| abstract |
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076647-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011227142-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987806-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9514934-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7776731-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012276721-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288811-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011119424-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011119424-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009127669-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009075434-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9576805-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015249005-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8598706-B2 |
| priorityDate |
2001-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |