Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-0655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G18-791 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G18-79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D179-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00 |
filingDate |
2006-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6a19055ab71bfe7066169b927fae8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a10c67e06d16a8a91166f5c4d8b10580 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a28a512426e9580683736d2c5420675 |
publicationDate |
2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2006216652-A1 |
titleOfInvention |
Composition for forming anti-reflective coating for use in lithography |
abstract |
A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): n nand can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8329387-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010304305-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8221965-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014228488-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010009297-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7595144-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016222262-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010092894-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8507192-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10202528-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010009293-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008131812-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008003524-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011200938-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426112-B2 |
priorityDate |
2001-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |