| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c3588afa3bb36973641de543d47d893 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2004-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54ca8d3a8fe30cac5098769e13b639e2 |
| publicationDate |
2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006141780-A1 |
| titleOfInvention |
Methods for the plasma formation of a microelectronic barrier layer |
| abstract |
The fabrication of an interconnect for a microelectronic device through the use of a nitrogen plasma to form a barrier layer. In one embodiment, an opening is formed in a dielectric layer and a metal layer is formed on the sidewalls and bottom of the opening. The metal layer, such as tantalum, is then exposed to nitrogen atoms thereby forming a metal nitride barrier layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905459-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105518826-A |
| priorityDate |
2004-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |