| abstract |
In a method of forming a semiconductor structure, a substrate comprising at least one contact pad is provided. A passivation layer is formed over the substrate. A mask which does not cover a portion of the passivation layer located over the at least one contact pad is formed over the passivation layer. An etching process adapted to remove a material of the passivation layer is performed and the mask is removed. Then, a second etching process adapted to remove residues of the passivation layer from the contact pad can be performed. The removal of the mask may be performed at a temperature of the substrate in a range from about −20° C. to about 100° C. The second etching process can comprise exposing the substrate to a gaseous etchant comprising hydrogen and fluorine, an amount of hydrogen in the etchant being about equal to an amount of fluorine, or greater. Thus, a formation of oxides and/or fluorides on the at least one contact pad can be avoided. |