| abstract |
Atomic layer deposited dielectric layers containing a lanthanum hafnium oxide layer and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices. In an embodiment, a lanthanum hafnium oxide layer is formed by depositing hafnium and lanthanum by atomic layer deposition onto a substrate surface. Embodiments include methods and apparatus in which precursors to deposit the lanthanum include a trisethylcyclopentadionatolanthanum precursor, a tris (2,2,6,6-tetramethl-3,5-heptanediaonato)lanthanum (III)precursor, a trisdipyvaloylmethanatolanthanum precursor, or a tris (2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum (III) tetraglyme adduct precursor. |