| abstract |
A CMOS image sensor and a method for fabricating the same are disclosed, in which an incidence of void formation is reduced or prevented, to improve characteristics of the image sensor. The CMOS image sensor includes a plurality of photodiode areas in a semiconductor substrate at constant intervals, a dielectric layer on or over the semiconductor substrate and the photodiode areas, a color filter layer on or over the dielectric layer at constant intervals, a void prevention layer between adjacent color filters in the color filter layer, a planarization layer on or over the semiconductor substrate and the void prevention layer, and a plurality of microlenses on the planarization layer. |