http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006079097-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2004-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f641d530eb5d13b961e3b7dd957e7843 |
| publicationDate | 2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2006079097-A1 |
| titleOfInvention | Method of forming dielectric layer in semiconductor device |
| abstract | A method of forming an insulating film of a semiconductor device is disclosed. Where an insulating film is formed and an annealing process is then performed to remove out-gassing sources contained in the insulating film. Spot-shaped defects and by-products or CH-radicals, which are formed on the surface of the insulating film, are then removed by thermal treatment. The generation of such defects on the surface of the insulating film is therefore minimized and potential failures such as broken or thin patterns formed on the insulating film are avoided. Accordingly, the reliability of the manufacturing process and the electrical properties of resulting devices are improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006017132-A1 |
| priorityDate | 2004-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.