| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_78c3cbcc6c948a3d4dab509a395c20c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6bb1ab37aa0b77ebd7fdc2d1c1be344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5e67bdd86682bfbe63acb12645d103c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_799cce2c8280560432b7058e95002751 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67086 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate |
2005-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a22f34b043de0acb8b6648437b1194a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23537d4aefc5bb2e54d990a3f9cf9314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d0f4f36f1ec7d2ec0c7874b79b385a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe8cf0f52597e2b277d74ac19d0a348 |
| publicationDate |
2005-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005233483-A1 |
| titleOfInvention |
Method of manufacturing semiconductor device, acid etching resistance material and copolymer |
| abstract |
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): n n (in the general formula (1), R 1 is a hydrogen atom or methyl group; R 3 is a cyclic group selected from an alicyclic group and an aromatic group; R 4 is a polar group; R 2 is a group represented by the following general formula (2); and j is 0 or 1): n n (in the general formula (2), R 5 is a hydrogen atom or methyl group). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105895748-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015034454-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015076537-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105576092-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349916-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10177272-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113671794-A |
| priorityDate |
2004-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |