http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221594-A1

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filingDate 2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005221594-A1
titleOfInvention ISFET with TiO2 sensing film
abstract A method of manufacturing a titanium dioxide (TiO 2 ) thin film, used as the sensing film of the ISFET, prepared on the gate oxide by sputtering deposition. It also utilizes current/voltage measuring system to measure the current-voltage curves for the different pH values and temperatures. From the relationship of the current-voltage curves and temperatures, the temperature parameter of the TiO 2 gate pH-ISFET can be calculated. In addition, it also uses a constant voltage/current circuit and a voltage-time recorder to measure the output voltage of the TiO 2 gate pH-ISFET, the drift rates for the different pH values and hysteresis for different pH loops are calculated.
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