http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002033705-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10cd067474edb79f198ed3f34fbf61b6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2001-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5089259c20480a48ff30fad41e36bdac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_852c48c2f8ff31ee6b5f6b23fa1e20ef |
| publicationDate | 2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2002033705-A1 |
| titleOfInvention | Method and apparatus for measuring hysteresis and drift values of an isfet using the hydrogenated amorphous silicon as a sensing film |
| abstract | A method of measuring the hysteresis value and the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005139490-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009008249-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221594-A1 |
| priorityDate | 2000-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.