Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2301-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2203-326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2848 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-22 |
filingDate |
2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13bf81401cf0426816f03d7464f7e7a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9db55764c6255d1a6413c62779d67ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16b037f8d560c4e3c4ff6354f6a62440 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c96f62dcca6474629f3a55f404a44a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8216e68c55b2a2c7b494631601ae2783 |
publicationDate |
2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2005161774-A1 |
titleOfInvention |
Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film |
abstract |
The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×10 5 Pa to 1×10 7 Pa at 150° C, and a thickness of from 3 μm to 100 μm is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 μm to 200 μm. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 μm. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006166462-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011008949-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016103262-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007059903-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9244204-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9563004-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7479455-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011110094-A1 |
priorityDate |
2002-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |