| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2985
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2982
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2998 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2005-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_245a01bf72981e58d12e0027114e490d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b9197d4d8449b58f7e86bf90d72ba60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a011cddcd2c89e410e34647689fbb4 |
| publicationDate |
2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005161763-A1 |
| titleOfInvention |
Porogen material |
| abstract |
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present. |
| priorityDate |
2002-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |