Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249978 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249994 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249976 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate |
2004-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f61356c52e7e4b7c9467b56ee7256aa |
publicationDate |
2005-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2005136240-A1 |
titleOfInvention |
Very low dielectric constant plasma-enhanced CVD films |
abstract |
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9394602-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EA-026182-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012172266-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2976577-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005189611-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008087965-A1 |
priorityDate |
2000-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |