| abstract |
A semiconductor device featuring higher integration and higher speed at the same time, and a manufacturing method for the same are provided. The semiconductor device is constructed by a semiconductor substrate on which a plurality of elements making up, for example, a logic type device, have been formed, a first interlayer insulating film serving as a first insulating film formed on the semiconductor substrate, a plurality of groove patterns provided in the first interlayer insulating film, lower interconnections formed by embedding electroconductive films, which are composed of an electroconductive material, including copper (Cu) or the like, in the groove patterns, and first porous portions that are selectively provided in the portions of the first interlayer insulating film having the lower interconnections formed therein, the portions being in contact with the lower interconnections. This arrangement provides an interlayer insulating film that exhibits satisfactory mechanical strength and thermal conductivity in a semiconductor device employing an interlayer insulating film composed of an insulating material having a low dielectric constant. |