| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2003-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03b4fb70a293841bc78b20568419a20b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c92431a7131c1b3d08016901981eb3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_deb0384b8a8f313c0bdd16ee65cdba11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f3e3242a69c7073c7a5b312579b9680
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c74aafca00e47e8eae790e0bd5906e8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f0cd7a6366386771181aece4dece757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d572872daf90da564301b2030002246 |
| publicationDate |
2005-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005062127-A1 |
| titleOfInvention |
Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits |
| abstract |
A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7687370-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007259507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007178661-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005145931-A1 |
| priorityDate |
2003-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |