| abstract |
A plasma processing system includes a processing chamber, a substrate holder provided within the processing chamber for holding a target substrate, a composite electrode provided within the processing chamber so as to oppose the substrate holder and having a plurality of first electrodes and second electrodes for generating plasma, and a gas supply section for supplying a material gas into the processing chamber. The system further includes a plasma region increasing/reducing section for increasing or reducing a plasma region formed in the processing chamber, and a cleaning section for plasma cleaning the inside of the processing chamber by using plasma generated in the plasma region increased or reduced by the plasma region increasing/reducing section. Thus, the quality of a film to be deposited can be improved by eliminating ion impact against the target substrate, and the system cost can be lowered by efficiently removing, with a simple structure, particles produced in the processing chamber. |