abstract |
A composition useful for forming a photoresist layer at i-line (365 nm) comprising (a) a film forming resin; (b) a compound represented by the following formula n n n wherein R 1 is a C 1-20 alkyl group, C 6-20 aryl group, or C 6-20 aralkyl group, the C 1-20 alkyl group, C 6-20 aryl group, or C 6-20 aralkyl group being unsubstituted or substituted by one or more groups selected from halogen, C 1-20 alkyl, C 18 perfluoroalkyl, C 1-20 alkoxy, cyano, hydroxyl, or nitro; R 2 and R 3 are each independently selected from hydrogen, C 1-8 alkyl, C 1-8 perfluoroalkyl, C 1-8 alkoxy, nitro, halogen, carboxyl, hydroxyl, and sulfate; each of m and n are independently 0 or a positive integer; and X − is a non-nucleophilic anion of an acid; (c) optionally, additives to adjust the optical, mechanical and film forming properties; (d) optionally, a base or radiation sensitive base; and (e) a solvent. |