abstract |
A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2 ; and a second gas supply pipe 14 for carrying hydrogen gas into the reaction tube 2 . Oxygen gas and hydrogen gas are supplied through the first gas supply pipe 13 and the second gas supply pipe 14 , respectively, into the reaction tube 2 , and the heater 12 heats the reaction tube 2 at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube 2 and thereby the organic substances adhering to the wafers 10 are oxidized, decomposed and removed. |