| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2001-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6950e9f50151109fe6732c24f382bb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f86269f2b8f22cc5815ea85f43c3ffe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e743ca7dc2c899916f65713022806219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce55ee411b8faf817734eaf30c4f498d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5fac535bbe468d938feba1ba9c6ea9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e21546b63609a1337d3e791540170228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb7fb9ab5c4e7a6f87d8f4476453f035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d2ff241d91736540c8436b7a37cb0ec |
| publicationDate |
2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004211759-A1 |
| titleOfInvention |
Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| abstract |
A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8382939-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011006038-A1 |
| priorityDate |
2000-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |