| abstract |
A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer ( 40 ) formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer ( 40 ), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer ( 40 ) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer ( 40 ) to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer ( 40 ). |