| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f81822114dfc8008d2ffaf925930e2b |
| publicationDate |
2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004110314-A1 |
| titleOfInvention |
Silicon-on-insulator devices and methods for fabricating the same |
| abstract |
Techniques for local and selective thinning of silicon using a combination of real time metrology for film thickness measurement accompanied by local etching of the silicon to thin the silicon to the desired value. Etching is accomplished using a miniature plasma etcher with activated etch gases. The etch tool and the metrology tool are stepped across the wafer surface to achieve wafer level thinning of the top silicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014070378-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008299686-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004191933-A1 |
| priorityDate |
2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |