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filingDate 2002-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6def990f5cc66abf5509c0375ffeda9a
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publicationDate 2004-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004058528-A1
titleOfInvention Selective dry etching of tantalum and tantalum nitride
abstract The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers ( 30 ) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper ( 40 ). The tantalum nitride films are selectively removed using an oxidizing plasma chemistry.
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