patent/US-2004058517-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004058517-A1

Outgoing Links

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filingDate	2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20bff001dee27104bc6fe42f2d5f9d93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390ca0967680ebea61e2f5e3ffa8279e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afe501edae5cb19ed01f02a761b6186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
publicationDate	2004-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2004058517-A1
titleOfInvention	Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask
abstract	A method of fabricating a gate structure of a field effect transistor comprising processes of forming an α-carbon mask and plasma etching a gate electrode and a gate dielectric using the α-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.
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Total number of triples: 192.