http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003224583-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02054
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46
filingDate 2002-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce2e44cdd85a4f66f013dad30415e88e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57f0df6f9c366f4eab081d5358bea546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ed4b04082272a002a8e42bd62c55eef
publicationDate 2003-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003224583-A1
titleOfInvention Method for plasma etching a wafer after backside grinding
abstract A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 Å thick, and preferably at least 100 Å thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7413915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010144146-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006115921-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111403261-A
priorityDate 2002-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6231775-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5780311-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6537926-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID421761316
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70761
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 32.