| abstract |
A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): n n n wherein R 1 and R 2 are each hydrogen atom, C 1 -C 8 alkyl or C 1 -C 8 alkenyl. The resist stripping agent easily and efficiently removes resist films and resist residues remaining after etching or after ashing subsequent to etching in manufacturing semiconductor devices at low temperatures in short period of time. The resist stripping agent is resistant to corrosion against materials for substrate, circuits and insulating films. |