| abstract |
A plasma processing apparatus and a plasma processing method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24 a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF 6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O 2 (oxygen) gas, and the volume ratio of the O 2 (oxygen) gas to the SF 6 gas is in a range from 11% to 25%. |