| abstract |
The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH 2 F 2 /Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material ( 1004 ) deposited on a layer of silicon oxide ( 1002 ) were etched according to the novel technique, forming relatively narrow trenches ( 1010, 1012, 1014, 1016, 1030, 1032, 1034 and 1036 ) and wider trenches ( 1020, 1022, 1040 and 1042 ). The technique is also suitable for forming dual damascene structures ( 1152, 1154 and 1156 ). In additional embodiments, manufacturing systems ( 1410 ) are provided for fabricating IC structures of the present invention. These systems include a controller ( 1400 ) that is adapted for interacting with a plurality of fabricating stations ( 1420, 1422, 1424, 1426 and 1428 ). |