| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f50f95c17e4934fb9f9810574cdf87aa |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-914
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate |
2002-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55fb12f266133a1d81bc8ff966564662 |
| publicationDate |
2003-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003054666-A1 |
| titleOfInvention |
Silicone polymer insulation film on semiconductor substrate |
| abstract |
A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has —SiR 2 O— repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si α O β C x H y (α, β, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6806207-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003162410-A1 |
| priorityDate |
1998-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |