http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003045006-A1

Outgoing Links

Predicate Object
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filingDate 2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe94237957ae9596189810c95903675d
publicationDate 2003-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003045006-A1
titleOfInvention Capacitor constructions comprising perovskite-type dielectric materials, and methods of forming capacitor constructions comprising perovskite-type dielectric materials
abstract The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has a different amount of crystallinity than the edge region. The invention also includes a method of forming a capacitor construction. A capacitor electrode is provided, and a perovskite-type dielectric material is chemical vapor deposited over the first capacitor electrode. The depositing includes flowing at least one metal organic precursor into a reaction chamber and forming a component of the perovskite-type dielectric material from the precursor. The precursor is exposed to different oxidizing conditions during formation of the perovskite-type dielectric material so that a first region of the dielectric material has more amorphous character than a second region of the dielectric material.
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priorityDate 2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 53.