| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3471 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_749b8a125d3fc05506979b5e4d6ea60b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2315e44ae271248d6eedd16a4875146d |
| publicationDate |
2002-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2002197850-A1 |
| titleOfInvention |
Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
| abstract |
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requires forming a diffusion barrier to prevent contamination of other parts of an integrated circuit and forming a seed layer to facilitate copper plating steps. Unfortunately, conventional methods of forming the diffusion barriers and seed layers require use of separate wafer-processing chambers, giving rise to transport delays and the introduction of defect-causing particles. Accordingly, the inventors devised unique wafer-processing chambers and methods of forming barrier and seed layers. One embodiment of the wafer-processing chamber includes equipment for physical vapor deposition and equipment for chemical vapor deposition to facilitate formation of diffusion barriers and seed layers within one chamber, thereby promoting fabrication efficiency and reducing defects. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004038523-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6927159-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7033930-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004241979-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6887781-B2 |
| priorityDate |
2000-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |