http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002089060-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_30568c6ab6cbc54250977463ccc678f7
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C12Q1-6827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C12Q1-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
filingDate 2002-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a55d69c7d5b6dd643048f6d6a5ce874
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93a9c67108552fcd44a93b0ebc4cd12f
publicationDate 2002-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2002089060-A1
titleOfInvention Semiconductor device with porous interlayer insulating film
abstract In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8456009-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361152-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010074429-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2851373-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7605071-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004229454-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110879-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999839-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011198757-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007037380-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7172980-B2
priorityDate 1998-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID226406400
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID226406399
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16773
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6131

Total number of triples: 42.