| abstract |
A method of fabricating an integrated circuit insulator stack, such as an emitter window dielectric, is disclosed. A single vacuum sequence ( 50 ) is performed in a low pressure chemical vapor deposition (LPCVD) process chamber. In one disclosed example, a layer of silicon dioxide ( 20 ) is first deposited by the chemical vapor deposition ( 44 ) of bistertiarybutylaminosilane (BTBAS) in the presence of oxygen; before removing the wafer from the process chamber, a layer of silicon nitride ( 22 ) is then deposited by the chemical vapor deposition ( 48 ) of BTBAS in ammonia. The CVD processes ( 44, 48 ) are performed at low pressures, such as 500 mTorr or less, and at low temperatures, such as below 650° C. |