| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6c9fea3915dabaa08c4b7eb4e5bded2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2001-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_113005575bd8dd5f20a0eab9fd2a4657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3dc3bf53cf3c72aef399d09affc571e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b5592d4d5b4bf1db65b4af68a52c5b1 |
| publicationDate |
2002-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2002059899-A1 |
| titleOfInvention |
Manufacturing method of semiconductor devices by using dry etching technology |
| abstract |
There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having a dual-damascene structure to control the shape and depth and prevent borderless etching which must be solved when a trench is formed. Polysilane and an insulating film are formed into a laminated structure so as to be integrated with each other after a dry etching step has been completed to easily form a contact hole having a high aspect ratio. The surface of polysilane is selectively formed into an insulating film so as to be used as a mask for use in a dry etching step. Polysilane for use as an anti-reflective film or an etching mask is changed to an oxide film or a nitride film so that films are easily removed. Hence it follows that a device region and a device isolation region of a densely integrated circuit can be smoothed, a self-aligned contact hole and metallization trench can be formed with a satisfactory manufacturing yield and the pattern of a gate electrode can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9556513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106206283-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011104868-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7297360-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9365922-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111446166-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7189651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011189450-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004110896-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1426424-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1427004-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8771834-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007151951-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9540519-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340869-B2 |
| priorityDate |
1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |