| abstract |
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N 2 ) to a major deposition gas component consisting of siloxane and N 2 O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27,or28 on a substrate targeted for film formation. |