| abstract |
A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability. n This application is based on Japanese Patent Applications 2000 - 92138 filed on Mar. 29, 2000, and 2001 - 2113 filed on Jan. 10, 2001, the entire contents of which are incorporated herein by reference. |