| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2001-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb25426d2d20ade497834010ee6eb1bf |
| publicationDate |
2001-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001024886-A1 |
| titleOfInvention |
Uniform dielectric layer and method to form same |
| abstract |
An exemplary embodiment of the present invention discloses a method for forming a forming a storage capacitor having a uniform dielectric film, by a the steps of: forming a bottom electrode of the storage capacitor and an insulation material about the bottom electrode, the bottom electrode comprises a nitridation receptive material and the insulation material comprises a nitridation resistive material; depositing a layer of non-doped silicon to a thickness of 20 Å or less over the bottom electrode and the insulation material; converting the silicon layer to a silicon nitride compound; depositing a silicon nitride of uniform thickness directly on the silicon nitride compound while using the silicon nitride compound as a nitride-nucleation enhancing surface; exposing the silicon nitride compound and the silicon nitride layer to an oxidation ambient to form a storage capacitor dielectric film; and then forming a top electrode of the storage capacitor over the storage capacitor dielectric film. |
| priorityDate |
1999-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |