| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-188
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K5-0017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
| filingDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf2d3fa92138b1255e0a3ee0549bd9af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edf254c599fc996dff412832a416ac2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbca30cecd88e02d47330954bc2410d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69c9bb001a37851eb67bdad13e788278
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19f6a3bff65482e0559821a810d86287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6016c81998f904981a45dbd06f124a49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13553691be4ed5c8c78b9a8aa9b5960 |
| publicationDate |
2022-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11528811-B2 |
| titleOfInvention |
Method, device and system for providing etched metallization structures |
| abstract |
Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic. |
| priorityDate |
2017-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |