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filingDate 2021-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a23e24c354e57b96c6001d3e7e2981fd
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publicationDate 2022-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11527614-B2
titleOfInvention Semiconductor structure with conductive structure and method for manufacturing the same
abstract Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a gate structure over a substrate and forming a mask layer covering the gate structure. The method also includes forming a source/drain structure adjacent to the gate structure over the substrate and forming a contact over the source/drain structure. The method also includes forming a dielectric layer over the contact and the mask layer and forming a first trench through the dielectric layer and the mask layer over the gate structure. The method also includes forming a first conductive structure in the first trench and removing an upper portion of the first conductive structure. The method also includes forming a second conductive structure through the dielectric layer and covering the contact and the first conductive structure.
priorityDate 2021-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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