http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424129-B2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2018-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd51002d2916b9e19fc6e0e117e90e7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c64071807e4d1e62b824f7e9a194acc4
publicationDate 2022-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11424129-B2
titleOfInvention Method of etching boron-doped p-type silicon wafer, method of evaluating metal contamination of boron-doped p-type silicon wafer and method of manufacturing boron-doped p-type silicon wafer
abstract The method of etching a boron-doped p-type silicon wafer includes preparing an etching gas by introducing an ozone-containing gas and hydrofluoric acid mist into a chamber and mixing them; and performing gas phase decomposition of a surface layer area of a boron-doped p-type silicon wafer with a resistivity of 0.016 Ωcm or less by bringing the etching gas into contact with a surface of the boron-doped p-type silicon wafer; and further includes introducing the ozone-containing gas into the chamber at a flow rate of 3,000 sccm or more; and preparing the hydrofluoric acid mist by atomizing hydrofluoric acid with a hydrofluoric acid concentration of 41 mass % or more.
priorityDate 2018-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021118694-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5423944-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06168922-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021028023-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011095016-A
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Total number of triples: 31.