| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5cb9c8c990ce0b201b6074ca4580e94 |
| publicationDate |
2022-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11289382-B2 |
| titleOfInvention |
Method for forming transistor with strained channel |
| abstract |
A method of forming a semiconductor structure. A first sacrificial gate is formed on a substrate. A spacer is formed on a sidewall of the first sacrificial gate. In the substrate, adjacent to the first sacrificial gate, a source region and a drain region are formed. A channel region is formed between the source region and the drain region. The first sacrificial gate is removed, and a gate trench is formed on the channel region between the spacers. The substrate is etched via the gate trench, thereby forming a recessed trench between the source region and the drain region, and extending into the substrate. The recessed trench has a hexagonal cross-sectional profile. A stress inducing material layer is then formed in the recessed trench. A channel layer is epitaxially grown on the stress inducing material layer. A gate structure is formed on the channel layer. |
| priorityDate |
2019-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |