http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11268841-B2

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filingDate 2018-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_058035075bf311ba9a74526ed0a1ae34
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publicationDate 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11268841-B2
titleOfInvention Semiconductor element and flow rate measurement device using same
abstract Provided are a semiconductor device and a thermal type fluid flow rate sensor which suppress strain occurring in an aluminum film and suppresses disconnection due to repeated metal fatigue of the aluminum film. The semiconductor device and the thermal type fluid flow rate sensor of the present invention are configured so that the heights of a silicon film and an aluminum film satisfy D>D1 between a flow rate sensor part (immediately above a diaphragm end part) D and a circuit part (LSI part) D1.
priorityDate 2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.