| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03912
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81193
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-06181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-14181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-14051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49894
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 |
| filingDate |
2019-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0710793640b11701d8a114b09614ece2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a649522a8ee6a8155bca027936d3b00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b731bb52719464d5fe49e31ff0d92f80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_145ab9809a6f80c4ce74e97138d4ebd4 |
| publicationDate |
2022-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11257744-B2 |
| titleOfInvention |
Method of forming vias using silicon on insulator substrate |
| abstract |
Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode. |
| priorityDate |
2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |