Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2e8fe3ffa3eb825604a7d6879fe241e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcb788ac2ea1a772ff0a53a49e5e2375 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2020-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ba0310c6130985b35dea4629cd66023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d7c5a4ddd42981f5a7e4fbf0f5b84cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24fb6ef56558bf0a12c0c52694a33c6e |
publicationDate |
2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11217488-B2 |
titleOfInvention |
Method of forming a semiconductor device |
abstract |
The disclosed technology generally relates to semiconductor devices and methods of forming the same. In one aspect, a method of forming a semiconductor device having vertical channel field-effect transistor (FET) devices comprises forming on a substrate, a plurality of semiconductor structures protruding vertically from a lower source/drain semiconductor layer of the substrate. The semiconductor structures can be arranged in an array having a plurality of rows and columns. The method can include etching metal line trenches between at least a subset of the rows and forming metal lines in the metal line trenches to contact the lower source/drain layer. The method can also include forming gate structures at least partly enclosing semiconductor structure channel portions located above the lower source/drain layer and forming upper source/drain metal contacts on semiconductor structure upper source/drain portions located above the channel portions. |
priorityDate |
2019-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |