| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b160e2fb2faec5078140040f7e4eb51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df24c2d165227a2e04a7150e0fb46184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b0eec08b0cf14e32ec6c7c5f1d3726b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f73fa1f970e7a42e3fb54e88eea51fd0 |
| publicationDate |
2022-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11217482-B2 |
| titleOfInvention |
Method for forming semiconductor device with resistive element |
| abstract |
A method for forming a semiconductor device is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a conductive line in the dielectric layer. The method also includes forming an etch stop layer over the dielectric layer and the conductive line and patterning the etch stop layer to form a contact opening exposing a portion of the conductive line. The method further includes forming a resistive layer over the etch stop layer, wherein the resistive layer extends into the contact opening. In addition, the method includes patterning the resistive layer to form a resistive element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023068503-A1 |
| priorityDate |
2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |